1. Crystallography and Product Principles of Silicon Carbide
1.1 Polymorphism and Atomic Bonding in SiC
(Silicon Carbide Ceramic Plates)
Silicon carbide (SiC) is a covalent ceramic substance made up of silicon and carbon atoms in a 1:1 stoichiometric ratio, differentiated by its exceptional polymorphism– over 250 well-known polytypes– all sharing strong directional covalent bonds yet differing in stacking series of Si-C bilayers.
The most technologically relevant polytypes are 3C-SiC (cubic zinc blende structure), and the hexagonal forms 4H-SiC and 6H-SiC, each displaying refined variations in bandgap, electron mobility, and thermal conductivity that influence their suitability for particular applications.
The toughness of the Si– C bond, with a bond power of around 318 kJ/mol, underpins SiC’s phenomenal hardness (Mohs firmness of 9– 9.5), high melting factor (~ 2700 ° C), and resistance to chemical destruction and thermal shock.
In ceramic plates, the polytype is usually chosen based upon the intended use: 6H-SiC prevails in architectural applications because of its simplicity of synthesis, while 4H-SiC dominates in high-power electronics for its exceptional charge carrier mobility.
The large bandgap (2.9– 3.3 eV depending upon polytype) also makes SiC an exceptional electrical insulator in its pure form, though it can be doped to function as a semiconductor in specialized digital devices.
1.2 Microstructure and Phase Pureness in Ceramic Plates
The efficiency of silicon carbide ceramic plates is seriously based on microstructural attributes such as grain size, thickness, stage homogeneity, and the visibility of secondary stages or contaminations.
High-quality plates are generally fabricated from submicron or nanoscale SiC powders through innovative sintering methods, resulting in fine-grained, completely dense microstructures that maximize mechanical toughness and thermal conductivity.
Impurities such as free carbon, silica (SiO â‚‚), or sintering help like boron or light weight aluminum must be carefully controlled, as they can create intergranular films that minimize high-temperature strength and oxidation resistance.
Residual porosity, also at low degrees (
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