1. Material Scientific Research and Structural Integrity
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic made up of silicon and carbon atoms set up in a tetrahedral latticework, largely in hexagonal (4H, 6H) or cubic (3C) polytypes, each displaying exceptional atomic bond strength.
The Si– C bond, with a bond energy of about 318 kJ/mol, is amongst the strongest in structural ceramics, conferring impressive thermal stability, solidity, and resistance to chemical strike.
This durable covalent network results in a material with a melting factor exceeding 2700 Ā° C(sublimes), making it among one of the most refractory non-oxide porcelains readily available for high-temperature applications.
Unlike oxide ceramics such as alumina, SiC maintains mechanical strength and creep resistance at temperatures above 1400 Ā° C, where several metals and standard ceramics begin to soften or break down.
Its reduced coefficient of thermal development (~ 4.0 Ć 10 ā»ā¶/ K) combined with high thermal conductivity (80– 120 W/(m Ā· K)) makes it possible for fast thermal cycling without tragic fracturing, an essential characteristic for crucible performance.
These innate properties come from the well balanced electronegativity and similar atomic dimensions of silicon and carbon, which promote a highly stable and largely loaded crystal structure.
1.2 Microstructure and Mechanical Durability
Silicon carbide crucibles are generally produced from sintered or reaction-bonded SiC powders, with microstructure playing a decisive role in resilience and thermal shock resistance.
Sintered SiC crucibles are created through solid-state or liquid-phase sintering at temperature levels over 2000 Ā° C, usually with boron or carbon additives to improve densification and grain border cohesion.
This procedure produces a totally thick, fine-grained structure with marginal porosity (
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